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[必]工 作 量： 2600字
[必]工作报酬： NTD 3200 若6/9 23:59前交件增至NTD 3600 (接件时先告知)
[必]涉及语言： 英文
[必]所属领域： 电子/半导体元件
[必]文件类型： 期刊
[必]截 稿 日： 6/10 中午12:00
[必]应征期限： 6/9 18:00
[必]联络方式： [email protected]
[必]付费方式： 完成后隔日汇款完成
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[选]工作要求： 之前有过品质不佳的经验(像是grammarly润的-___-，
希望可以试译以下100字
[选]参考段落：（提供部分段落让译者评估难度，若未提供请勿删除）
[选]试 译 文：
GaN-based high electron mobility transistors (HEMTs) have played an important
role in power electronics [1]. A high drive current can be achieved due to the
high saturation velocity of electrons in GaN and the presence of
two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction [2].
Normally-off operation is preferred for power switch application for adequate
safety conditions [3]. However, normally-off device options in the mainstream,
such as gate-recessed metal-insulator-semiconductor HEMTs (MIS-HEMTs) or p-GaN
gate HEMTs [4], require recess processes, which introduce surface damages that
may deteriorate the electrical performance, such as on-resistance, off-current,
or threshold voltage stability, of the devices.
[选]其他事项：（若未提供请勿删除）
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