Job contents: Join advance Reliability One-Team Activities
1. Involve advance <28nm circuit-like test pattern design for circuit reliability study
2. Device and gate dielectric reliability characterization
3. FinFET reliability model development
Job Spec:
1. Own EE or physics MS or Ph.D. degreee
2. Familiar with device or gate dielectric physics
3. With device or gate dielectric characterization experience
4. With circuit design experience will be a plus
请直接mail CHWANGC@tsmc.com
目前31薪水约四至五万 请面试时直接和HR谈