[试题] 电子学(一) 吕良鸿 第三次小考

楼主: chun10396974 (pulse6974)   2019-12-18 17:59:15
课程名称︰电子学(一)
课程性质︰电机系大二上必修
课程教师︰吕良鸿
开课学院:电机资讯学院
开课系所︰电机工程学系
考试日期(年月日)︰2019/12/13
考试时限(分钟):50 min
试题 :
1. An NMOS transistor, operating in the linear-resistance region with vds =
50 mV, is found to conduct 25 μA for vgs = 1V and 50μA for vgs = 1.5V.
(a) What is the apparent value of threshold voltage Vt = ? (7%)
(b) If kn'= 50 μA / V^2, what is the device W/L ratio? (7%)
(c) What current would you expect to flow with vgs = 2V and vds = 0.1V? (7%)
(d) If the device is operated at vgs = 2V, at what value of vds will the
drain end of the MOSFET channel just reach pinch-off? And what is the
corresponding drain current? (14%)
2. For each of the circuits shown in Fig.1, find the labeled node voltages. The
NMOS transistors have Vt = 0.9V and kn'(W/L) = 1.5 mA / V^2. (35%, 7% for
each)
+2.5V +5V
↑ ↑
∣ ┌┘
└〢 Q1
└→

├─○V1

┌┘
┌〢 Q2
 ̄ └→

├─○V2


〉1kΩ




-2.5V
+5V



〉1kΩ



┌──┼───○V3
| │
│ │
|┌─┘
└〢 Q1
─→


┌──┼───○V4
| │
│ │
|┌─┘
└〢 Q2
─→


├───○V5


〉1kΩ





Fig.1
3. For the NMOS amplifier in Fig.2, replace the transistor with its T equi-
valent circuit, assuming λ = 0. Derive expressions for the voltage gains
vs/vi and vd/vi. (30%)
+VDD



〉RD



├───○ vd

┌┘
┌──── 〢
| └→
∣ ∣
(±) vi ├───○ vs
∣ |
∣ 〈
 ̄ 〉
〈 RS



-VSS
Fig.2
作者: tingjingsake (0'_'0?)   2019-12-18 21:44:00
0'_'0

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