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业界首见QLC NAND SSD开始出货！美光盘后持续大涨
美光科技(Micron Technology Inc.)、英特尔(Intel Corporation)5月21日宣布，业界首
见的4 bits/cell 3D NAND技术开始投产、出货。
利用通过考验的64层结构，新的4 bits/cell NAND技术让每颗晶粒的密度达到1
terabit(Tb)、成为世界上密度最高的快闪存储器。
英特尔非挥发性内存技术开发副总裁RV Giridhar指出，1Tb 4 bits/cell的商用化是非
挥发性内存(NVM)历史上一项重大的里程碑。
美光21日同时宣布，业界首见采用革命性QLC(四级单元)NAND技术的SSD(5210 ION)开始对
战略支持合作伙伴和客户出货、预计今年秋季将会扩大供货。
美光指出，QLC NAND较现有TLC(三级单元)NAND的位元密度高出33%。
https://www.moneydj.com/KMDJ/News/NewsViewer.aspx?a=29eba80c-d4c4-4c36-98d3-7c851e5ddbf5
https://www.anandtech.com/show/12744/micron-launches-first-qlc-nand-micron-5210-ion-enterprise-sata-ssd
"The most important question is what the write endurance of the new QLC-based
SSDs will be. The 5210 ION's endurance rating will be less than that of the
5200 ECO, which is rated for around 1 DWPD in most capacities. Micron
indicates that their QLC NAND is good for around 1k Program/Erase cycles,
which suggests a limit of at most about 0.5 DWPD before write amplification
is taken into account. This is still higher than many consumer SSDs, where
0.3 DWPD is a typical rating for entry-level SATA SSDs with 3D TLC NAND."
Micron新闻稿:
http://investors.micron.com/releasedetail.cfm?releaseid=1068052