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1.原文连结：连结过长者请使用短网址。
https://www.phonearena.com/news/qualcomm-dual-sourcing_id147225
2.原文标题：标题须完整写出且须符合内文(否则依板规删除并水桶)。
Qualcomm might split 3nm Snapdragon 8 Gen 4 production between TSMC and
Samsung
高通可能把8 gen 4同时给台积和三星生产
3.原文来源(媒体/作者)：例:苹果日报/王大明(若无署名作者则不须)
phone arena/ Alan Friedman
4.原文内容：请刊登完整全文(否则依板规删除并水桶)。
Qualcomm's current high-end chipset, the Snapdragon 8 Gen 2, is manufactured
by TSMC using its 4nm process node. In the past. Qualcomm has had its
flagship application processor built in some years by TSMC and by Samsung
Foundry in other years. For example, the Snapdragon 855 and 865 were built by
TSMC using its 7nm and enhanced 7nm nodes respectively. The Snapdragon 888
SoC and the Snapdragon 8 Gen 1 were produced by Samsung Foundry.
高通目前的高端芯片组 Snapdragon 8 Gen 2 由台积电使用其 4nm 工艺节点制造。在过
去。高通的旗舰应用处理器在某些年份由台积电制造，而在其他年份则由三星代工厂制造
。例如，骁龙 855 和 865 分别由台积电使用其 7nm 和增强型 7nm 节点制造。
Snapdragon 888 SoC 和 Snapdragon 8 Gen 1 由 Samsung Foundry 生产。
But last year Qualcomm, seeking to increase the performance of the Snapdragon
8+ Gen 1, turned production of the 4nm chip over to TSMC. This also occurred
at the same time it was discovered that Samsung Foundry's yields on its 4nm
production was a paltry 35%. This means that at the time, 65% of the die
produced on a 300mm wafer did not pass quality control. As a result, Qualcomm
decided to turn manufacturing of the Snapdragon 8+ Gen 1 AP over to TSMC.
但去年高通为了提高第一代骁龙 8+ 的性能，将 4nm 芯片的生产交给了台积电。这也发
生在同时发现三星代工厂的 4nm 生产良率只有微不足道的 35%。这意味着当时在 300mm
晶圆上生产的芯片中有 65% 没有通过品质控制。因此，高通决定将 Snapdragon 8+ Gen
1 AP 的制造工作移交给台积电。
Samsung has reportedly doubled its 4nm yield from 35% to 70% nearly matching
TSMC
据报导，三星已将其 4nm 良率从 35% 提高了一倍至 70%，几乎与台积电相当
Even though Samsung has reportedly improved its 4nm yield to 70%, the
Snapdragon 8 Gen 2 chipsets (including the "for Galaxy" variant) are built by
TSMC. According to tipster Revegnus (via Wccftech), Qualcomm is considering a
dual-sourcing strategy for future high-end chipsets. This plan would start
with the Snapdragon 8 Gen 4 for 2025 with TSMC building the regular version
of the SoC using its enhanced N3E 3nm process node. The Snapdragon 8 Gen 4
for Galaxy, earmarked for the flagship Galaxy S25 line, would be made by
Samsung Foundry using its 3nm process node.
尽管据报导三星已将其 4nm 良率提高到 70%，但骁龙 8 Gen 2 芯片组（包括“for
Galaxy”版本）是由台积电制造的。根据线人 Revegnus（通过 Wccftech）的说法，高通
正在考虑为未来的高端芯片组采用双重采购策略。该计划将从 2025 年的 Snapdragon 8
Gen 4 开始，台积电将使用其增强的 N3E 3nm 工艺节点构建常规版本的 SoC。专用于旗
舰 Galaxy S25 系列的适用于 Galaxy 的 Snapdragon 8 Gen 4 将由三星代工厂使用其
3nm 工艺节点制造。
Last year, it appeared that Samsung would be producing the overclocked
Samsung Galaxy 8 Gen 2 for Galaxy SoC but this plan, similar to what Revegnus
says could be in the works for 2025, did not happen. As we already pointed
out, TSMC is the foundry making both Snapdragon 8 Gen 2 variants. But things
do get a bit dicier at 3nm as TSMC continues to use its FinFET transistors
for 3nm while Samsung uses Gate All Around (GAA) for its 3nm production.
The Snapdragon 8 Gen 4 for Galaxy chip could outperform the regular version
thanks to GAA
去年，三星似乎将为 Galaxy SoC 生产超频的三星 Galaxy 8 Gen 2，但这一计划（类似
于 Revegnus 所说的可能在 2025 年进行的计划）并未实现。正如我们已经指出的那样，
台积电是同时生产 Snapdragon 8 Gen 2 变体的代工厂。但随着台积电继续在 3nm 中使
用其 FinFET 晶体管，而三星在其 3nm 生产中使用 Gate All Around (GAA)，在 3nm 处
事情确实变得有点不确定。
The Snapdragon 8 Gen 4 for Galaxy chip could outperform the regular version
thanks to GAA
由于GAA，用于Galaxy芯片的Snapdragon 8 Gen 4可以胜过普通版本
Since GAA surrounds the channel on all four sides, it reduces current leaks,
increases the drive current, offers more precise control over current flow
and chips using GAA typically have faster performance consuming less energy.
TSMC plans on moving to GAA from FinFET with its 2nm process node. The bottom
line is that the Snapdragon 8 Gen 4 for Galaxy chipsets, if made by Samsung
Foundry, could outperform the regular version of the chip made by TSMC for
reasons other than overclocking the high-performance core.
由于 GAA 在所有四个侧面都围绕着通道，因此它减少了电流泄漏，增加了驱动电流，提
供了对电流的更精确控制，并且使用 GAA 的芯片通常具有更快的性能，消耗更少的能量
。台积电计划将其 2nm 工艺节点从 FinFET 转移到 GAA。最重要的是，如果三星代工厂
制造的适用于 Galaxy 芯片组的 Snapdragon 8 Gen 4，除了对高性能内核进行超频之外
，其性能可能会优于台积电制造的普通版芯片。
Using both TSMC and Samsung Foundry to make both variants of the Snapdragon 8
Gen 4 would be a cost-cutting move for Qualcomm. The upcoming Snapdragon 8
Gen 3 will be made by TSMC using its N4P process node. Only Apple among major
phone manufacturers seems willing to spend the $20,000 per wafer price for
3nm production this year which is why the iPhone 15 Pro and iPhone 15 Ultra
could be the only handsets powered by 3nm silicon later this year.
使用台积电和三星晶圆代工厂来制造 Snapdragon 8 Gen 4 的两种变体对于高通来说将是
一项削减成本的举措。即将面世的骁龙 8 Gen 3 将由台积电使用其 N4P 工艺节点制造。
在主要手机制造商中，似乎只有 Apple 今年愿意为 3nm 生产花费每片晶圆 20,000 美元
的价格，这就是为什么 iPhone 15 Pro 和 iPhone 15 Ultra 可能是今年晚些时候唯一采
用 3nm 芯片的手机
But next year could see a decline in wafer prices for 3nm production which
would allow Qualcomm to use the cutting-edge node for both Qualcomm 8 Gen 4
versions regardless if they are coming from TSMC or Samsung Foundry or both.
但明年 3nm 生产的晶圆价格可能会下降，这将使高通能够将尖端节点用于两个高通 8
Gen 4 版本，无论它们来自台积电还是三星代工或两者。
A recent report says that TSMC will be ready to mass produce 2nm chips by
2025. The same year, Samsung Foundry is also supposed to start production of
2nm silicon in 2025 moving to 1.4nm by 2027. Since transistor counts continue
to move up with every new process node, the main issue is making transistors
small enough so that more of them can fit inside chips. There are 16 billion
chips inside the Snapdragon 8 Gen 2 versus 10.3 billion in the Snapdragon 888
introduced in late 2020 and used on phone in 2021.
最近的一份报告称，台积电将准备在 2025 年之前量产 2nm 芯片。同年，三星代工厂也
应该在 2025 年开始生产 2nm 硅，到 2027 年转移到 1.4nm。由于晶体管数量随着每个
新工艺节点，主要问题是使晶体管足够小，以便更多晶体管可以装入芯片内。
Snapdragon 8 Gen 2 中有 160 亿个芯片，而 2020 年底推出并于 2021 年用于手机的
Snapdragon 888 中有 103 亿个芯片。
5.心得/评论：内容须超过繁体中文30字(不含标点符号)。
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看来三星很有可能用自己生产的gen 4
理论上三星的GAA能耗比它们自己的4LPP少了50%
的确是非常大的提升
但是否能够因此超过竞争对手就不太确定了
反正就算三星版的翻船对高通来说也没差就是了