http://www.androidstandard.com/samsung-galaxy-s7-edge/
Update on 13/10/2015 :
According to a report from China, Qualcomm is going to build Snapdragon 820
on both 14nm and 10nm processes. Actually Samsung is building this SoC for
Qualcomm. So it seems that Samsung is going to produce Snapdragon 820 built
on 14nm FinFET process initially and going to migrate to 10nm node technology
once it got ready for mass production. According to previous rumours, Samsung
will be ready for 10nm chipsets by the end of 2015 or at the beginning of
2016. So Qualcomm Snapdragon 820 will be built on 14nm process initially and
will be built on 10nm node process later. But Samsung may use Snapdragon 820
built on 10nm process in Galaxy S7 Edge. According to some rumours, the
Exynos M1 (8890) chipset is also going to be built on 10nm process. So both
Galaxy S7 Edge variants will be powered by chipset built on 10nm node
technology.
消息指出, 高通的S820将会在三星14nm与10nm制程上推出.三星起先将会用
14nm FinFET制造S820, 然后当其10nm制程量产后,转移到10nm制程.根据先前
谣言, 三星在2015年底至2016年初将会有10nm芯片组推出.根据一些其他谣言,
Exynos M1 (8890/Mongoose) 芯片组将会在10nm制程制造(译注:先前Mongoose
单核略输苹果A9,多核大赢的结果,是在14nm上制造的芯片).所以两种不同版本
的Galaxy S7,不管是使用S820或Mongoose AP可能都将会使用10nm制程生产的
芯片组.
http://ragingbull.com/forum/topic/1035115
三星10nm制程跟自己14nm制程比较,大概是速度快20%,功耗少40%.所以如果
Mongoose以10nm制造的话,毫无意外的一定轻松完胜A9.
最后要说上面的消息有一定程度的真实性,无法确定全为真,但是有很多是事实.